Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe /D. I. Gorn, A. V. Voitsekhovskii, S. M. Dzyadukh, S. N. Nesmelov

Photodetectors and solar cells with GeSi quantum dots parameters dependence on growth conditions /K. A. Lozovoy, A. V. Voitsekhovskii, A. P. Kokhanenko, V. G. Satdarov

Investigation of GeSi quantum dot structures using the methods of admittance spectroscopy /V. G. Satdarov, A. V. Voitsekhovskii, A. P. Kokhanenko, K. A. Lozovoy

Influence of edge energy on modeling the growth kinetics of quantum dots /K. A. Lozovoy, A. P. Kokhanenko, A. V. Voitsekhovskii Lozovoy, Kirill A.

Changes in the electro-physical propertyies of MCT epitaxial films affected by a plasma volume discharge induced by an avalache beam in atmospheric-pressure air /D. V. Grigoryev, A. V. Voytsekhovskii, K. A. Lozovoy [et.al.]

UV photodetectors based on wide-gap AlGaN semiconductors /A. V. Voytsekhovskii, S. N. Nesmelov Voytsekhovskiy, Alexander V.

Investigation of admittance for CdHgTe-based MIS-structures with single quantum wells under the wide temperature range (8-200) K /A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, D. I. Gorn

Measurement of the charge carrier mobility in MEH-PPV and MEH-PPV-POSS organic semiconductor films /I. V. Romanov, A. V. Voytsekhovskii, K. M. Dyagterenko [et.al.]

Ge/Si elongated quantum dots formation modelling with respect to the energy of edges /A. P. Kokhanenko, K. A. Lozovoy, A. V. Voitsekhovskii Kokhanenko, Andrey P.

Capacitance-voltage characteristics of CdHgTe MIS structures with single quantum wells based on HgTe /A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh Voytsekhovskiy, Alexander V.

Admittance of HgCdTe MIS structures with HgTe single quantum well /I. I. Izhnin, E. I. Fitsych, S. N. Nesmelov [et.al.]

Generalized Muller-Kern formula for equilibrium thickness of a wetting layer with respect to the dependence of the surface energy of island facets on the thickness of the 2D layer /K. A. Lozovoy, A. P. Kokhanenko, A. V. Voytsekhovskii Lozovoy, Kirill A.

Admittance of metal-insulator-semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates /A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

Background donor concentration in HgCdTe /I. I. Izhnin, K. D. Mynbaev, A. V. Voytsekhovskiy [et.al.]

Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe /A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

Hysteresis phenomena in mis structures based on graded-gap MBE HgCdTe with a two-layer plasma-chemical insulator SiO2/Si3N4 /A. V. Voytsekhovskiy, S. N. Nesmelov, S. M. Dzyadukh Voytsekhovskiy, Alexander V.

Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe /A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]

Changes in the electro-physical properties of MCT epitaxial films affected by a plasma volume discharge induced by an avalanche beam in atmospheric-pressure air /D. V. Grigoryev, A. V. Voytsekhovskii, K. A. Lozovoy [et.al.]

Long-term stability of electron concentration in HgCdTe-based p-n junctions fabricated with ion etching /I. I. Izhnin, K. D. Mynbaev, A. V. Voitsekhovsky [et.al.]

Effect of pulse nanosecond volume discharge in air at atmospheric pressure on electrical properties of MIS structures based on p-HgCdTe grown by molecular beam epitaxy /A. V. Voytsekhovskii, S. N. Nesmelov, S. M. Dzyadukh [et.al.]