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Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis I. I. Izhnin, I. I. Syvorotka, O. I. Fitsych [et al.]

Contributor(s): Syvorotka, I. I | Fitsych, Olena I | Varavin, Vasilii S | Dvoretsky, Sergei A | Marin, Denis V | Mikhailov, Nikolay N | Remesnik, V. G | Yakushev, Maxim V | Mynbaev, Karim D | Izhnin, Igor I | Voytsekhovskiy, Alexander V | Korotaev, Alexander GMaterial type: ArticleArticleSubject(s): эпитаксиальные пленки | мышьяк | ионная имплантация | теллурид кадмия-ртутиGenre/Form: статьи в журналах Online resources: Click here to access online In: Semiconductor science and technology Vol. 34, № 3. P. 035009 (1-7)Abstract: The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in combination with wet chemical etching has been employed for the profiling. After the implantation, a typical n + -n-р structure was observed and three electron species were detected: (a) low-mobility electrons in the 400–500 nm-thick top radiation-damaged n + -layer, (b) mid-mobility electrons also originating from radiation damage and spreading down to 700–900 nm, and (c) high-mobility electrons located in the n-region extending beyond 700–900 nm and down to the p-n junction. A comparison of the extracted electron parameters with the arsenic profile obtained with secondary-ion mass spectroscopy as well as with the defect pattern obtained with transmission electron microscopy allowed for the identification of the origin of all three electron species.
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The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in combination with wet chemical etching has been employed for the profiling. After the implantation, a typical n + -n-р structure was observed and three electron species were detected: (a) low-mobility electrons in the 400–500 nm-thick top radiation-damaged n + -layer, (b) mid-mobility electrons also originating from radiation damage and spreading down to 700–900 nm, and (c) high-mobility electrons located in the n-region extending beyond 700–900 nm and down to the p-n junction. A comparison of the extracted electron parameters with the arsenic profile obtained with secondary-ion mass spectroscopy as well as with the defect pattern obtained with transmission electron microscopy allowed for the identification of the origin of all three electron species.

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