Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition /D. V. Lyapunov, A. A. Pishchagin, D. V. Grigoryev [et.al.]

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Другой Автор
Lyapunov, D. V.
Grigoryev, Denis V.
Korotaev, A. G.
Voytsekhovskiy, Alexander V.
Kokhanenko, Andrey P.
Iznin, I. I.
Savytskyy, Hrygory V.
Bonchyk, A. Yu.
Dvoretsky, Sergei A.
Pishchagin, Anton A.
Mikhailov, Nikolay N.
Источник
Journal of Physics: Conference Series 2016 Vol. 741. P. 012097 (1-5)
Аннотация
In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the films
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$a Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition $c D. V. Lyapunov, A. A. Pishchagin, D. V. Grigoryev [et.al.]
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$a In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the films
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$a Lyapunov, D. V.
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$a Grigoryev, Denis V.
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$a Korotaev, A. G.
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Резюме
In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the films