Electro-physical characteristics of a HgCdTe epitaxial films upon exposure by a volume discharge in air at atmospheric pressure /A. V. Barko, A. A. Pishchagin, D. V. Grigoryev [et.al.]

Электронный ресурс
Другой Автор
Barko, A. V.
Grigoryev, Denis V.
Tarasenko, Viktor Fedotovich
Shulepov, Mikhail A.
Pishchagin, Anton A.
Источник
Journal of Physics: Conference Series 2016 Vol. 741. P. 012098 (1-5)
Аннотация
In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) of p-type conductivity. It is suggested that after exposure on film surface oxide layer was formed. This layer has a built positive charge that leads to the formation of an inversion layer which "shunts" the rest of the sample so that the measured field dependence of Hall coefficient corresponds to the material of n-type of conductivity.
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$a In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) of p-type conductivity. It is suggested that after exposure on film surface oxide layer was formed. This layer has a built positive charge that leads to the formation of an inversion layer which "shunts" the rest of the sample so that the measured field dependence of Hall coefficient corresponds to the material of n-type of conductivity.
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$a эпитаксиальные пленки
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$a Barko, A. V.
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$a Grigoryev, Denis V.
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$a Tarasenko, Viktor Fedotovich
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$a Pishchagin, Anton A.
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Резюме
In this paper the influence of the volume discharge of nanosecond duration formed in a non-uniform electric field at atmospheric pressure on samples of epitaxial films HgCdTe (MCT) of p-type conductivity. It is suggested that after exposure on film surface oxide layer was formed. This layer has a built positive charge that leads to the formation of an inversion layer which "shunts" the rest of the sample so that the measured field dependence of Hall coefficient corresponds to the material of n-type of conductivity.