Electrical properties of the V-defects of epitaxial HgCdTe /V. A. Novikov, D. V. Grigoryev, D. A. Bezrodnyy [et.al.]

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Другой Автор
Novikov, Vadim A.
Bezrodnyy, Dmitriy A.
Voytsekhovskiy, Alexander V.
Dvoretsky, Sergei A.
Mikhailov, Nikolay N.
Grigoryev, Denis V.
Источник
Journal of electronic materials 2017 Vol. 46, № 7. P. 4435-4438
Аннотация
The manufacturing process of wide-band-gap matrix photodetector devices and miniaturization of their individual pixels gave rise to increased demands on the material quality and research methods. In the present paper we propose using the methods of atomic-force microscopy to study the local distribution of electrical properties of the V-defects that form in epitaxial films of HgCdTe during their growth process via molecular beam epitaxy. We demonstrate that a complex approach to studying the electrical properties of a predefined region of a V-defect allows one to obtain more detailed information on its properties. Using scanning spreading resistance microscopy, we show that, for a V-defect when the applied bias is increased, the surface area that participates in the process of charge carrier transfer also increases almost linearly. The presence of a potential barrier on the periphery of individual crystal grains that form the V-defect interferes with the flow of current and also affects the distribution of surface potential and capacitive contrast.
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02747nab a2200409 c 4500
001
 
 
vtls000620312
003
 
 
RU-ToGU
005
 
 
20180130100000.0
007
 
 
cr |
008
 
 
180129|2017    xxu     s         a eng dd
024
7
$a 10.1007/s11664-017-5393-0 $2 doi
035
$a to000620312
039
9
$a 201801301000 $b cat202 $c 201801291542 $d VLOAD $y 201801291431 $z VLOAD
040
$a RU-ToGU $b rus $c RU-ToGU
245
1
0
$a Electrical properties of the V-defects of epitaxial HgCdTe $c V. A. Novikov, D. V. Grigoryev, D. A. Bezrodnyy [et.al.]
504
$a Библиогр.: 13 назв.
520
3
$a The manufacturing process of wide-band-gap matrix photodetector devices and miniaturization of their individual pixels gave rise to increased demands on the material quality and research methods. In the present paper we propose using the methods of atomic-force microscopy to study the local distribution of electrical properties of the V-defects that form in epitaxial films of HgCdTe during their growth process via molecular beam epitaxy. We demonstrate that a complex approach to studying the electrical properties of a predefined region of a V-defect allows one to obtain more detailed information on its properties. Using scanning spreading resistance microscopy, we show that, for a V-defect when the applied bias is increased, the surface area that participates in the process of charge carrier transfer also increases almost linearly. The presence of a potential barrier on the periphery of individual crystal grains that form the V-defect interferes with the flow of current and also affects the distribution of surface potential and capacitive contrast.
653
$a тонкие пленки
653
$a контактная разность потенциалов
653
$a Кельвина зонд, метод
653
$a зондовая микроскопия
653
$a молекулярно-лучевая эпитаксия
653
$a теллурид кадмия ртути
653
$a v-дефекты
655
4
$a статьи в журналах
700
1
$a Novikov, Vadim A.
700
1
$a Bezrodnyy, Dmitriy A.
700
1
$a Voytsekhovskiy, Alexander V.
700
1
$a Dvoretsky, Sergei A.
700
1
$a Mikhailov, Nikolay N.
700
1
$a Grigoryev, Denis V.
773
0
$t Journal of electronic materials $d 2017 $g Vol. 46, № 7. P. 4435-4438 $x 0361-5235
852
4
$a RU-ToGU
856
7
$u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000620312
908
$a статья
999
$a VIRTUA               
999
$a VTLSSORT0010*0030*0050*0070*0080*0240*0350*0390*0400*2450*5040*5200*6530*6531*6532*6533*6534*6535*6536*6550*7000*7005*7001*7002*7003*7004*7730*8520*8560*9080*9992
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Резюме
The manufacturing process of wide-band-gap matrix photodetector devices and miniaturization of their individual pixels gave rise to increased demands on the material quality and research methods. In the present paper we propose using the methods of atomic-force microscopy to study the local distribution of electrical properties of the V-defects that form in epitaxial films of HgCdTe during their growth process via molecular beam epitaxy. We demonstrate that a complex approach to studying the electrical properties of a predefined region of a V-defect allows one to obtain more detailed information on its properties. Using scanning spreading resistance microscopy, we show that, for a V-defect when the applied bias is increased, the surface area that participates in the process of charge carrier transfer also increases almost linearly. The presence of a potential barrier on the periphery of individual crystal grains that form the V-defect interferes with the flow of current and also affects the distribution of surface potential and capacitive contrast.