Electron mobility-lifetime and resistivity mapping of GaAs:Cr wafers /I. Chsherbakov, I. Kolesnikova, A. Lozinskaya [et.al.]

Электронный ресурс
Другой Автор
Chsherbakov, I.
Lozinskaya, A. D.
Mihaylov, T.
Novikov, Vladimir A.
Shemeryankina, A.
Tolbanov, Oleg P.
Tyazhev, Anton V.
Zarubin, A. N.
Kolesnikova, I.
Источник
Journal of instrumentation : electronic journal 2017 Vol. 12, № 2. P. C02016 (1-8)
Аннотация
Previous works onchromium compensated gallium arsenide (GaAs:Cr) have shown high efficiency, good spatial and energy resolution, which is obviously connected with the high quality of material itself. The purpose of this research was to aggravate the diffusion process by increasing the annealing temperature and to observe whether there will be any degradation of material characteristics. The investigation of three 3-inch GaAs:Cr wafers with different annealing temperature of chromium was carried out. Resistivity and mobility-lifetime measurements were made using pad sensors made of these wafers. The I-V curves were built to estimate the resistivity across the wafer. Furthermore charge collection efficiency (CCE) measurements were carried out in order to estimate the μeτ e product of GaAs:Cr. The resistivity mapping has showed a variation of resistivity across the wafer in the range from 1.25 × 109 to 5.5 × 108 Ohm cm. Although the third wafer showed quite good uniformity, the resistance didn't reached values higher than 3.5 × 108 Ohm cm. In spite of harsh diffusion conditions all the materials showed quite good CCE (about 90%) and μ eτe more than 5 × 10−5 cm2/V. Also a strong dependency between the resistivity and mobility-lifetime product was found only for one wafer. So the uniformity of μeτ e product across the wafer can be stated independently of resistivity. More detailed information and discussion of experimental results is presented in the article.
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03128nab a2200409 c 4500
001
 
 
vtls000616077
003
 
 
RU-ToGU
005
 
 
20171107090400.0
007
 
 
cr |
008
 
 
171030|2017    enk     s         a eng dd
024
7
$a 10.1088/1748-0221/12/02/C02016 $2 doi
035
$a to000616077
039
9
$a 201711070904 $b cat202 $c 201711070859 $d cat202 $c 201710301546 $d VLOAD $y 201710301515 $z VLOAD
040
$a RU-ToGU $b rus $c RU-ToGU
245
1
0
$a Electron mobility-lifetime and resistivity mapping of GaAs:Cr wafers $c I. Chsherbakov, I. Kolesnikova, A. Lozinskaya [et.al.]
504
$a Библиогр.: 11 назв.
520
3
$a Previous works onchromium compensated gallium arsenide (GaAs:Cr) have shown high efficiency, good spatial and energy resolution, which is obviously connected with the high quality of material itself. The purpose of this research was to aggravate the diffusion process by increasing the annealing temperature and to observe whether there will be any degradation of material characteristics. The investigation of three 3-inch GaAs:Cr wafers with different annealing temperature of chromium was carried out. Resistivity and mobility-lifetime measurements were made using pad sensors made of these wafers. The I-V curves were built to estimate the resistivity across the wafer. Furthermore charge collection efficiency (CCE) measurements were carried out in order to estimate the μeτ e product of GaAs:Cr. The resistivity mapping has showed a variation of resistivity across the wafer in the range from 1.25 × 109 to 5.5 × 108 Ohm cm. Although the third wafer showed quite good uniformity, the resistance didn't reached values higher than 3.5 × 108 Ohm cm. In spite of harsh diffusion conditions all the materials showed quite good CCE (about 90%) and μ eτe more than 5 × 10−5 cm2/V. Also a strong dependency between the resistivity and mobility-lifetime product was found only for one wafer. So the uniformity of μeτ e product across the wafer can be stated independently of resistivity. More detailed information and discussion of experimental results is presented in the article.
653
$a детекторы рентгеновского излучения
653
$a удельное сопротивление
653
$a арсенид галлия
653
$a температура отжига
655
4
$a статьи в журналах
700
1
$a Chsherbakov, I.
700
1
$a Lozinskaya, A. D.
700
1
$a Mihaylov, T.
700
1
$a Novikov, Vladimir A.
700
1
$a Shemeryankina, A.
700
1
$a Tolbanov, Oleg P.
700
1
$a Tyazhev, Anton V.
700
1
$a Zarubin, A. N.
700
1
$a Kolesnikova, I.
773
0
$t Journal of instrumentation : electronic journal $d 2017 $g Vol. 12, № 2. P. C02016 (1-8) $x 1748-0221
852
4
$a RU-ToGU
856
7
$u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000616077
908
$a статья
999
$a VIRTUA
999
$a VTLSSORT0010*0030*0050*0070*0080*0240*0350*0390*0400*2450*5040*5200*6530*6531*6532*6533*6550*7000*7008*7001*7002*7003*7004*7005*7006*7007*7730*8520*8560*9080*9992
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статьи в журналах
Резюме
Previous works onchromium compensated gallium arsenide (GaAs:Cr) have shown high efficiency, good spatial and energy resolution, which is obviously connected with the high quality of material itself. The purpose of this research was to aggravate the diffusion process by increasing the annealing temperature and to observe whether there will be any degradation of material characteristics. The investigation of three 3-inch GaAs:Cr wafers with different annealing temperature of chromium was carried out. Resistivity and mobility-lifetime measurements were made using pad sensors made of these wafers. The I-V curves were built to estimate the resistivity across the wafer. Furthermore charge collection efficiency (CCE) measurements were carried out in order to estimate the μeτ e product of GaAs:Cr. The resistivity mapping has showed a variation of resistivity across the wafer in the range from 1.25 × 109 to 5.5 × 108 Ohm cm. Although the third wafer showed quite good uniformity, the resistance didn't reached values higher than 3.5 × 108 Ohm cm. In spite of harsh diffusion conditions all the materials showed quite good CCE (about 90%) and μ eτe more than 5 × 10−5 cm2/V. Also a strong dependency between the resistivity and mobility-lifetime product was found only for one wafer. So the uniformity of μeτ e product across the wafer can be stated independently of resistivity. More detailed information and discussion of experimental results is presented in the article.