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Analysis of the nBn-type barrier structures for infrared photodiode detectors A. V. Voitsekhovskii, D. I. Gorn
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ArticleSubject(s): фотодетекторы | барьерные структуры | инфракрасные фотодиодыGenre/Form: статьи в журналах Online resources: Click here to access online
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Journal of communications technology and electronics Vol. 62, № 3. P. 314-316Abstract: Modern trends in the technology of CdxHg1–xTe-based photosensitive barrier structures for the middle and far infrared bands, which can operate at near-room temperatures, are analyzed. Main approaches to solving the problem of increasing the photodiode-detector operating temperature have been considered and analyzed.
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Modern trends in the technology of CdxHg1–xTe-based photosensitive barrier structures for the middle and far infrared bands, which can operate at near-room temperatures, are analyzed. Main approaches to solving the problem of increasing the photodiode-detector operating temperature have been considered and analyzed.
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