Formation of Ge/Si nanoscale structures at different growth conditions by molecular beam epitaxy /V. A. Timofeev, A. I. Nikiforov, V. A. Zinovyev [et.al.]

Электронный ресурс
Другой Автор
Timofeev, V. A.
Zinovyev, V. A.
Teys, S. A.
Pchelyakov, Oleg P.
Nikiforov, Alexander I.
Источник
Journal of nanoelectronics and optoelectronics 2015 Vol. 10, № 1. P. 99-103
Аннотация
Nanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by changing of growth parameters. Formation of Ge quantum dots in hut-island form is observed during deposition of Ge on Si film or GeSi solid solution layer in temperature range between 300 and 500 °C. Density of Ge islands without use of surfactant reaches 3.5 · 1011 cm–2 at lateral size of 12 nm. Lowering growth temperature up to 300 °C emergence of quantum fortress array takes place at deposition of Ge on GeSi solid solution layer. By depositing a Ge wetting layer at thickness of 3–5 monolayers and subsequent continuous annealing we have obtained nano-structures in form of wires. The results of these studies are of great applied value in the field of infrared photodetectors and single-hole transistors.
Всего оценка: 0
Нет записей для отображения.
 
 
 
02297nab a2200337 c 4500
001
 
 
vtls000577713
003
 
 
RU-ToGU
005
 
 
20170622091300.0
007
 
 
cr |
008
 
 
170619|2015    xxu     s         a eng dd
024
7
$a 10.1166/jno.2015.1714 $2 doi
035
$a to000577713
039
9
$a 201706220913 $b cat202 $c 201706192044 $d VLOAD $y 201706161339 $z VLOAD
040
$a RU-ToGU $b rus $c RU-ToGU
245
1
0
$a Formation of Ge/Si nanoscale structures at different growth conditions by molecular beam epitaxy $c V. A. Timofeev, A. I. Nikiforov, V. A. Zinovyev [et.al.]
504
$a Библиогр.: 11 назв.
520
3
$a Nanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by changing of growth parameters. Formation of Ge quantum dots in hut-island form is observed during deposition of Ge on Si film or GeSi solid solution layer in temperature range between 300 and 500 °C. Density of Ge islands without use of surfactant reaches 3.5 · 1011 cm–2 at lateral size of 12 nm. Lowering growth temperature up to 300 °C emergence of quantum fortress array takes place at deposition of Ge on GeSi solid solution layer. By depositing a Ge wetting layer at thickness of 3–5 monolayers and subsequent continuous annealing we have obtained nano-structures in form of wires. The results of these studies are of great applied value in the field of infrared photodetectors and single-hole transistors.
653
$a наноразмерные структуры
653
$a молекулярно-лучевая эпитаксия
655
4
$a статьи в журналах
700
1
$a Timofeev, V. A.
700
1
$a Zinovyev, V. A.
700
1
$a Teys, S. A.
700
1
$a Pchelyakov, Oleg P.
700
1
$a Nikiforov, Alexander I.
773
0
$t Journal of nanoelectronics and optoelectronics $d 2015 $g Vol. 10, № 1. P. 99-103 $x 1555-130X
852
4
$a RU-ToGU
856
7
$u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000577713
908
$a статья
999
$a VIRTUA               
999
$a VTLSSORT0010*0030*0050*0070*0080*0240*0350*0390*0400*2450*5040*5200*6530*6531*6550*7000*7004*7001*7002*7003*7730*8520*8560*9080*9992
Нет комментариев.
Предмет
статьи в журналах
Резюме
Nanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by changing of growth parameters. Formation of Ge quantum dots in hut-island form is observed during deposition of Ge on Si film or GeSi solid solution layer in temperature range between 300 and 500 °C. Density of Ge islands without use of surfactant reaches 3.5 · 1011 cm–2 at lateral size of 12 nm. Lowering growth temperature up to 300 °C emergence of quantum fortress array takes place at deposition of Ge on GeSi solid solution layer. By depositing a Ge wetting layer at thickness of 3–5 monolayers and subsequent continuous annealing we have obtained nano-structures in form of wires. The results of these studies are of great applied value in the field of infrared photodetectors and single-hole transistors.