Properties of arsenic-implanted Hg1-xCdxTe MBE films /I. I. Izhnin, A. V. Voitsekhovskiі, A. G. Korotaev [et.al.]

Электронный ресурс
Другой Автор
Izhnin, Igor I.
Korotaev, A. G.
Fitsych, Olena I.
Bonchyk, A. Yu.
Savytskyy, Hrygory V.
Mynbaev, Karim D.
Varavin, Vasilii S.
Dvoretsky, Sergei A.
Yakushev, Maxim V.
Voytsekhovskiy, Alexander V.
Jakiela, Rafal
Trzyna, Malgorzata
Источник
EPJ Web of Conferences 2017 Vol. 133. P. 01001 (1-4)
Аннотация
Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate.
Всего оценка: 0
Нет записей для отображения.
 
 
 
02409nab a2200445 c 4500
001
 
 
vtls000577241
003
 
 
RU-ToGU
005
 
 
20180801083700.0
007
 
 
cr |
008
 
 
170608|2017    fr      s         a eng d
024
7
$a 10.1051/epjconf/201713301001 $2 doi
035
$a to000577241
039
9
$a 201808010837 $b cat202 $c 201706130725 $d cat202 $c 201706081831 $d VLOAD $y 201706081806 $z VLOAD
040
$a RU-ToGU $b rus $c RU-ToGU
245
1
0
$a Properties of arsenic-implanted Hg1-xCdxTe MBE films $c I. I. Izhnin, A. V. Voitsekhovskiі, A. G. Korotaev [et.al.]
504
$a Библиогр.: 11 назв.
520
3
$a Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate.
653
$a пленки
653
$a акцепторные дефекты
653
$a молекулярно-лучевая эпитаксия
653
$a электрические свойства
655
4
$a статьи в журналах
700
1
$a Izhnin, Igor I.
700
1
$a Korotaev, A. G.
700
1
$a Fitsych, Olena I.
700
1
$a Bonchyk, A. Yu.
700
1
$a Savytskyy, Hrygory V.
700
1
$a Mynbaev, Karim D.
700
1
$a Varavin, Vasilii S.
700
1
$a Dvoretsky, Sergei A.
700
1
$a Yakushev, Maxim V.
700
1
$a Voytsekhovskiy, Alexander V.
700
1
$a Jakiela, Rafal
700
1
$a Trzyna, Malgorzata
773
0
$t EPJ Web of Conferences $d 2017 $g Vol. 133. P. 01001 (1-4) $x 2100-014X
852
4
$a RU-ToGU
856
7
$u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000577241
908
$a статья
999
$a VIRTUA
999
$a VTLSSORT0010*0030*0050*0070*0080*0240*0350*0390*0400*2450*5040*5200*6530*6531*6532*6533*6550*7000*7009*7001*7002*7003*7004*7005*7006*7007*7008*70010*70011*7730*8520*8560*9080*9992
Нет комментариев.
Предмет
статьи в журналах
Резюме
Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate.