Atomic and electronic structure of bismuth-bilayer-terminated Bi2Se3(0001) prepared by atomic hydrogen etching /R. Shokri, H. L. Meyerheim, S. Roy [et.al.]

Электронный ресурс
Другой Автор
Shokri, Roozbeh
Roy, Sumalay
Mohseni, Katayoon
Ernst, Arthur
Otrokov, Mikhail M.
Chulkov, Evgueni V.
Kirschner, Jürgen
Meyerheim, Holger L.
Источник
Physical Review B 2015 Vol. 91, № 20. P. 205430-1-205430-7
Аннотация
A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bilayer with a lateral size of several hundred nanometers on Bi2Se3(0001). Using scanning tunneling microscopy, surface x-ray diffraction, and Auger electron spectroscopy we show that exposure of Bi2Se3(0001) to atomic hydrogen completely removes selenium from the top quintuple layer. The band structure of the system, calculated from first principles for the experimentally derived atomic structure, is in excellent agreement with recent photoemission data. Our results open interesting perspectives for the study of topological insulators in general.
Всего оценка: 0
Нет записей для отображения.
 
 
 
02338nab a2200397 c 4500
001
 
 
vtls000553151
003
 
 
RU-ToGU
005
 
 
20190115182900.0
007
 
 
cr |
008
 
 
181202|2015    xxu     s         a eng d
024
7
$a 10.1103/PhysRevB.91.205430 $2 doi
035
$a to000553151
039
9
$a 201901151829 $b cat34 $c 201812021545 $d staff $c 201612161012 $d cat202 $c 201612131140 $d VLOAD $y 201612130915 $z VLOAD
040
$a RU-ToGU $b rus $c RU-ToGU
245
1
0
$a Atomic and electronic structure of bismuth-bilayer-terminated Bi2Se3(0001) prepared by atomic hydrogen etching $c R.  Shokri, H. L. Meyerheim, S.  Roy [et.al.]
504
$a Библиогр.: 41 назв.
520
3
$a A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bilayer with a lateral size of several hundred nanometers on Bi2Se3(0001). Using scanning tunneling microscopy, surface x-ray diffraction, and Auger electron spectroscopy we show that exposure of Bi2Se3(0001) to atomic hydrogen completely removes selenium from the top quintuple layer. The band structure of the system, calculated from first principles for the experimentally derived atomic structure, is in excellent agreement with recent photoemission data. Our results open interesting perspectives for the study of topological insulators in general.
653
$a селенид висмута
653
$a топологические изоляторы
653
$a атомная структура
653
$a электронная структура
655
4
$a статьи в журналах
700
1
$a Shokri, Roozbeh
700
1
$a Roy, Sumalay
700
1
$a Mohseni, Katayoon
700
1
$a Ernst, Arthur
700
1
$a Otrokov, Mikhail M.
700
1
$a Chulkov, Evgueni V.
700
1
$a Kirschner, Jürgen
700
1
$a Meyerheim, Holger L.
773
0
$t Physical Review B $d 2015 $g Vol. 91, № 20. P. 205430-1-205430-7 $x 1098-0121
852
4
$a RU-ToGU
856
7
$u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000553151
908
$a статья
999
$a VIRTUA
999
$a VTLSSORT0070*0080*0240*0350*0400*2450*5040*5200*6530*6531*6532*6533*6550*7000*7007*7001*7002*7003*7004*7005*7006*7730*8520*8560*9080*9992
Нет комментариев.
Предмет
статьи в журналах
Резюме
A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bilayer with a lateral size of several hundred nanometers on Bi2Se3(0001). Using scanning tunneling microscopy, surface x-ray diffraction, and Auger electron spectroscopy we show that exposure of Bi2Se3(0001) to atomic hydrogen completely removes selenium from the top quintuple layer. The band structure of the system, calculated from first principles for the experimentally derived atomic structure, is in excellent agreement with recent photoemission data. Our results open interesting perspectives for the study of topological insulators in general.