Generating femtosecond pulses in the mid-IR and THz ranges in GaSe1-xTex crystals /D. M. Lubenko, V. F. Losev, Yu. M. Andreev [et.al.]

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Другой Автор
Lubenko, D. M.
Andreev, Yury M. 1946-
Lanskii, Grigory V.
Svetlichnyi, Valerii A.
Losev, V. F.
Источник
Bulletin of the Russian Academy of Sciences: Physics 2015 Vol. 79, № 2. P. 238-241
Аннотация
GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This minimizes optical losses and increases the damage threshold by ≥20%, hardness by 33%, and the efficiency of femtosecond Ti:Sa laser frequency conversion into the 8.8–24 μm and 0.2–3 THz ranges by ≥50%.
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$a GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This minimizes optical losses and increases the damage threshold by ≥20%, hardness by 33%, and the efficiency of femtosecond Ti:Sa laser frequency conversion into the 8.8–24 μm and 0.2–3 THz ranges by ≥50%.
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$a Томский государственный университет $b Физический факультет $b Кафедра оптики и спектроскопии
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Резюме
GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This minimizes optical losses and increases the damage threshold by ≥20%, hardness by 33%, and the efficiency of femtosecond Ti:Sa laser frequency conversion into the 8.8–24 μm and 0.2–3 THz ranges by ≥50%.