Effect of the barrier thickness on the optical properties of InGaN/GaN/Al2O3 (0001) LED heterostructures I. S. Romanov, I. A. Prudaev, V. N. Brudnyi [et.al.]
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ArticleSubject(s): галлий | нитрид индия | квантовые ямы | Штарка эффект | фотолюминесценция | светодиодыGenre/Form: статьи в журналах Online resources: Click here to access online
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Russian physics journal Vol. 58, № 7. P. 996-1000Abstract: The results of numerical and experimental study of the electric field strength, photoluminescence wavelength, and internal quantum efficiency of InGaN/GaN (0001) blue LED heterostructures consisting of InGaN multiple quantum wells and GaN barrier layers with the thicknesses of 3, 10, and 15 nm are presented. It is shown that a decrease in the thicknesses of the GaN barrier layers results in a blue shift of the wavelength of LED structures and in an increase of internal quantum efficiency of the structure at high excitation power density.
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The results of numerical and experimental study of the electric field strength, photoluminescence wavelength, and internal quantum efficiency of InGaN/GaN (0001) blue LED heterostructures consisting of InGaN multiple quantum wells and GaN barrier layers with the thicknesses of 3, 10, and 15 nm are presented. It is shown that a decrease in the thicknesses of the GaN barrier layers results in a blue shift of the wavelength of LED structures and in an increase of internal quantum efficiency of the structure at high excitation power density.
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