Low-temperature transport of charge carriers in InGaN/GaN multiple quantum well light-emitting diodes I. Prudaev, O. Tolbanov, S. Khludkov
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ArticleSubject(s): нитрид индия-галлия | нитрид галлия | вольт-амперные характеристики | светоизлучающие диодыGenre/Form: статьи в журналах Online resources: Click here to access online
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Physica status solidi A Vol. 212, № 5. P. 930-934Abstract: The results of experimental investigation of forward current-voltage characteristics of InGaN/GaN multiple quantum well light-emitting diodes are presented. A new model for explaining the complex current dependence on voltage is proposed. The model is based on the assumption of space charge limited current, and ballistic overflow of electrons through the multiple quantum well region. It is shown that electrons are captured in the shallow traps while transferring through the active region. The results of measurements indicate that the activation energy of traps decreases with a temperature decrease, which corresponds to the theory of hopping in exponential band tails.
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The results of experimental investigation of forward current-voltage characteristics of InGaN/GaN multiple quantum well light-emitting diodes are presented. A new model for explaining the complex current dependence on voltage is proposed. The model is based on the assumption of space charge limited current, and ballistic overflow of electrons through the multiple quantum well region. It is shown that electrons are captured in the shallow traps while transferring through the active region. The results of measurements indicate that the activation energy of traps decreases with a temperature decrease, which corresponds to the theory of hopping in exponential band tails.
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